M31 collaborates with High Tower Semiconductor to successfully develop advanced memory solutions for 65 nanometer SRAM and ROM

M31 Technology Corporation, a global silicon smart finance supplier, announced a partnership with Tower Semiconductor to successfully develop SRAM (Static Random Access Memory) and ROM (Read Only Memory) IP products with a 65 nanometer process. The design module will be delivered to the client for verification, and the circuit architecture designed with the low-power component Analog FET (Analog Field Effect Transistor) on this platform can meet the strict low-power requirements of SoC chips.

In addition, M31's IP provides multiple sets of Deep NWell voltage combinations (0-8V, 8-16V, 16-24V) for customers to choose from, allowing users to integrate more flexibly with other external ICs. Moreover, despite its low power consumption orientation, M31 overcomes design challenges and achieves a dual goal of speed optimization for customers.

M31 is a professional silicon intellectual property (IP) supplier dedicated to providing IP products that have undergone rigorous silicon verification, while Gaota Semiconductor is a leading OEM specializing in providing advanced analog circuit semiconductor solutions. The cooperation between M31 and High Tower Semiconductor mainly focuses on mature processes, developing advanced memory compilers such as Single Port, One Port, and ROM for the 65 nanometer process platform. This will provide more reliable and efficient semiconductor components for applications such as the Internet of Things (IoT), smart wearable devices, vehicle to vehicle (V2X), and artificial intelligence (AI), helping customers gain a competitive advantage in the market. Both parties will improve production efficiency and reduce costs through technological integration, meeting the growing market demand for highly integrated, low-power, high-performance semiconductor solutions.

Lian Nanjun, Vice President of R&D at M31, stated that M31 is particularly focused on the integration of analog ICs and low-power components in this collaboration, demonstrating a high degree of synergy and assisting customers in achieving performance and functional advantages in increasingly complex SoC chip architectures.

Samir Chaudhry, Vice President of Customer Design Support Center at Tower Semiconductor, stated that as the demand for components in digital analog ICs continues to rise, this expansion of cooperation with M31 to develop an advanced memory compiler compatible with Tower 65nm power management platform highlights the commitment of both parties to providing customers with cutting-edge solutions and efficient and accurate tools to create next-generation ICs.